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FDN340 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDN340 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page December 1999 ©1999 Fairchild Semiconductor Corporation FDN340P Rev C (W) FDN340P Single P-Channel, Logic Level, PowerTrench® ® MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: Load switching and power management, battery charging circuits, and DC/DC conversion. Features –2 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = –4.5 V RDS(ON) = 0.11 Ω @ VGS = –2.5 V. RDS(ON) = 0.210 Ω @ VGS = –1.8 V. • Low gate charge (8nC typical). • High performance trench technology for extremely low RDS(ON) . • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. G D S SuperSOT -3 TM 340 D S G Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) –2 A – Pulsed –10 Power Dissipation for Single Operation (Note 1a) 0.5 PD (Note 1b) 0.46 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 340 FDN340P 7’’ 8mm 3000 units |
Numéro de pièce similaire - FDN340 |
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Description similaire - FDN340 |
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