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FDN338 Fiches technique(PDF) 4 Page - Fairchild Semiconductor |
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FDN338 Fiches technique(HTML) 4 Page - Fairchild Semiconductor |
4 / 4 page FDN338P Rev.D 0 2 4 6 8 0 1 2 3 4 5 Q , GATE CHARGE (nC) g V = -5V DS I = -1.6A D -15V 0.1 0.2 0.5 1 2 5 10 20 40 0.01 0.05 0.1 0.5 1 2 5 10 - V , DRAIN-SOURCE VOLTAGE (V) RDS(ON) LIMIT A DC DS 1s 100ms 10ms 1ms 10s V = -4.5V SINGLE PULSE R =250°C/W T = 25°C θJA GS A 0.0001 0.001 0.01 0.1 1 10 100 300 0 10 20 30 40 50 SINGLE PULSE TIME (SEC) SINGLE PULSE R =250° C/W T = 25°C θJA A Figure 10. Single Pulse Maximum Power Dissipation. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) R (t) = r(t) * R R = 250 °C/W Duty Cycle, D = t /t 1 2 θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Figure 11. Transient Thermal Response Curve. 0.1 0.2 0.5 1 2 5 10 20 20 50 100 200 400 600 1000 -V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0 V GS Coss Crss Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical Characteristics |
Numéro de pièce similaire - FDN338 |
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Description similaire - FDN338 |
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