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FDN336 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDN336 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrench TM MOSFET General Description Features Absolute Maximum Ratings T A = 25 oC unless other wise noted Symbol Parameter FDN336P Units V DSS Drain-Source Voltage -20 V V GSS Gate-Source Voltage ±8 V I D Drain Current - Continuous -1.3 A - Pulsed -10 P D Maximum Power Dissipation (Note 1a) 0.5 W (Note 1b) 0.46 T J,TSTG Operating and Storage Temperature Range -55 to +150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W FDN336P Rev.C -1.3 A, -20 V. R DS(ON) = 0.20 Ω @ VGS = -4.5 V R DS(ON) = 0.27 Ω @ VGS= -2.5 V. Low gate charge (3.6 nC typical). High performance trench technology for extremely low R DS(ON). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. SOT-23 SuperSOT TM-8 SOIC-16 SO-8 SOT-223 SuperSOT TM-6 G D S SuperSOT -3 TM 336 D S G © 1998 Fairchild Semiconductor Corporation |
Numéro de pièce similaire - FDN336 |
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Description similaire - FDN336 |
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