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FDN335 Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDN335 Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDN335N Rev. C Typical Characteristics 0 2 4 6 8 10 01234 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS = 5V 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 1.7A VGS = 4.5V 0 0.04 0.08 0.12 0.16 0.2 0.24 1 2345 VGS, GATE TO SOURCE VOLTAGE (V) ID = 0.85A TA = 125 oC TA = 25 oC 0 2 4 6 8 10 00.511.522.5 3 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 4.5V 3.0V 2.5V 2.0V 1.5V 3.5V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0246 8 10 ID, DRAIN CURRENT (A) VGS = 2.0V 2.5V 4.0V 3.5V 4.5V 3.0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. |
Numéro de pièce similaire - FDN335 |
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Description similaire - FDN335 |
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