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FDN308P Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDN308P Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page February 2001 2001 Fairchild Semiconductor Corporation FDN308P Rev B(W) FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Power management • Load switch • Battery protection Features • –20 V, –1.5 A. R DS(ON) = 125 m Ω @ V GS = –4.5 V RDS(ON) = 190 m Ω @ V GS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low R DS(ON) and 30% higher power handling capability than SOT23 in the same footprint G D S SuperSOT -3 TM D S G Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –1.5 A – Pulsed –10 Maximum Power Dissipation (Note 1a) 0.5 PD (Note 1b) 0.46 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 308 FDN308P 7’’ 8mm 3000 units |
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