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FDN308P Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDN308P Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDN308P Rev B(W) Typical Characteristics 0 2 4 6 8 10 0123 4 -VDS, DRAIN-SOURCE VOLTAGE (V) -4.0V -2.0V -2.5V VGS = -4.5V -3.0V -3.5V 0.8 1 1.2 1.4 1.6 1.8 2 02468 10 -ID, DRAIN CURRENT (A) VGS = -2.5V -4.0V -4.5V -3.0V -3.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) I D = -1.5A V GS = -4.5V 0.06 0.1 0.14 0.18 0.22 0.26 0.3 0.34 1 234 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.8 A T A = 125 oC TA = 25 oC Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 2 4 6 8 10 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC VDS = - 5V 125 oC 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) T A = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Numéro de pièce similaire - FDN308P |
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Description similaire - FDN308P |
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