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FDN306P Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN306P Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDN306P Rev D W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –12 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C –3 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.6 –1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C 2.5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –2.6 A VGS = –2.5 V, ID = –2.3 A VGS = –1.8V, ID = –1.8 A VGS = –4.5 V, ID = –2.6A , TJ=125 °C 30 39 54 40 40 50 80 54 m Ω ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –10 A gFS Forward Transconductance VDS = –5 V, ID = –2.6 A 10 S Dynamic Characteristics Ciss Input Capacitance 1138 pF Coss Output Capacitance 454 pF Crss Reverse Transfer Capacitance VDS = –6 V, V GS = 0 V, f = 1.0 MHz 302 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 10 20 ns td(off) Turn–Off Delay Time 38 61 ns tf Turn–Off Fall Time VDD = –6 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 35 56 ns Qg Total Gate Charge 12 17 nC Qgs Gate–Source Charge 2 nC Qgd Gate–Drain Charge VDS = –6 V, ID = –2.6 A, VGS = –4.5 V 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.42 (Note 2) –0.6 –1.2 V Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) 250 °C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% |
Numéro de pièce similaire - FDN306P |
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Description similaire - FDN306P |
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