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1N4154 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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1N4154 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N4154 Rev. B0 1 July 2009 1N4154 High Conductance Fast Diode Features • 500 milliwatt Power Dissipation package. • Fast Switching Speed. • Typical capacitance less than 1.0 picofarad. Absolute Maximum Ratings * T A = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Unit WIV Working Inverse Voltage 35 V IO Average Rectified Current 100 mA IF DC Forward Current (IF) 300 mA if Recurrent Peak Forward Current (IF) 400 mA iF(surge) Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 A A TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature 175 °C Symbol Parameter Value Unit PD Total Power Dissipation at TA = 25°C Linear Derating Factor from TA = 25°C 500 3.33 mW mW/°C RθJA Thermal Resistance, Junction to Ambient 300 °C/W DO-35 Color Band Denotes Cathode General Description The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. |
Numéro de pièce similaire - 1N4154_09 |
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Description similaire - 1N4154_09 |
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