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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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FDD603AL Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDD603AL Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  FDD603AL, Rev. B Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics WDSS Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 12 A 100 mJ IAR Maximum Drain-Source Avalanche Current 12 A BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 32 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 11.7 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C -4.5 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 9.5 A VGS = 10 V, ID = 9.5 A,TJ=125 °C VGS = 4.5 V, ID = 7.5 A 0.016 0.024 0.026 0.023 0.035 0.037 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 60 A gFS Forward Transconductance VDS = 10 V, ID = 9.5 A 18 S Dynamic Characteristics Ciss Input Capacitance 670 pF Coss Output Capacitance 345 pF Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0 V f = 1.0 MHz 95 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 10 20 ns tr Turn-On Rise Time 16 30 ns td(off) Turn-Off Delay Time 27 45 ns tf Turn-Off Fall Time VDD = 15 V, ID = 1 A VGS = 10 V, RGEN = 6 Ω 12 22 ns Qg Total Gate Charge 19 26 nC Qgs Gate-Source Charge 3.5 nC Qgd Gate-Drain Charge VDS =10 V, ID = 9.5 A VGS = 10 V, 5.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ( Note 1) 33 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.78 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJC has been used to determine some maximum ratings. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) RθJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. b) RθJA= 96oC/W on a minimum mounting pad. |
Numéro de pièce similaire - FDD603AL |
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Description similaire - FDD603AL |
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