FDC6506P datasheet(3/8 Pages) FAIRCHILD

No de pièce	FDC6506P

Description	Dual P-Channel Logic Level PowerTrench??MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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FDC6506P Rev. C

Typical Characteristics

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

-50

-25

0

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (

o

C)

ID=-1.8A

VGS=-10V

0

2

4

6

8

10

012

345

-VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS=-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

-3.0V

0.5

1

1.5

2

2.5

02468

10

-ID, DRAIN CURRENT (A)

VGS=-4.0V

-4.5V

-5.0V

-6.0V

-7.0V

-10V

0

1

2

3

4

1234

5

-VGS, GATE TO SOURCE VOLTAGE (V)

VDS=-5V

TJ=-55

o

C

25

o

C

125

o

0.001

0.01

0.1

1

10

0

0.3

0.6

0.9

1.2

1.5

-VSD, BODY DIODE VOLTAGE (V)

VGS=0

TJ=125

o

C

25

o

C

-55

o

C

0.1

0.2

0.3

0.4

0.5

2345

6789

10

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ=125

o

C

25

o

C

ID=-1.0A

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