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FDC642 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDC642
Description  P-Channel 2.5V Specified PowerTrench?줞OSFET
Download  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC642 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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FDC642P, Rev. B
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250
µA
-20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250
µA, Referenced to 25°C
-16
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 8 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -8 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250
µA
-0.4
-0.7
-1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = -250
µA, Referenced to 25°C
2.5
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = -4.5 V, ID = -4 A
VGS = -4.5 V, ID = -4 A, TJ=125
°C
VGS = -2.5 V, ID = -3.2 A
0.054
0.076
0.077
0.065
0.105
0.100
ID(on)
On-State Drain Current
VGS = -4.5 V, VDS = -5 V
-10
A
gFS
Forward Transconductance
VDS = -5 V, ID = -4 A
9
S
Dynamic Characteristics
Ciss
Input Capacitance
640
pF
Coss
Output Capacitance
180
pF
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V
f = 1.0 MHz
90
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
11
20
ns
tr
Turn-On Rise Time
19
30
ns
td(off)
Turn-Off Delay Time
26
42
ns
tf
Turn-Off Fall Time
VDD = -10 V, ID = -1 A
VGS = -4.5 V, RGEN = 6
35
55
ns
Qg
Total Gate Charge
7.2
10
nC
Qgs
Gate-Source Charge
1.7
nC
Qgd
Gate-Drain Charge
VDS = -10 V, ID = -4 A
VGS = -4.5 V,
1.6
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -1.3 A
(Note 2)
-0.75
-1.2
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper.
b) 156° C/W when mounted on a minimum pad of 2 oz.copper.


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