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FDC6322C Fiches technique(PDF) 4 Page - Fairchild Semiconductor |
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FDC6322C Fiches technique(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page FDC6322C.Rev B1 Typical Electrical Characteristics: N-Channel 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 1 1.2 1.4 I , DRAIN CURRENT (A) V = 2.0V GS 2.7 3.0 4.0 4.5 D 3.5 2.5 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 3. On-Resistance Variation with Temperature. 0.5 1 1.5 2 2.5 0 0.05 0.1 0.15 0.2 V , GATE TO SOURCE VOLTAGE (V) 25°C 125°C V = 5.0V DS GS T = -55°C J Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 0.2 0.5 V , BODY DIODE FORWARD VOLTAGE (V) T = 125°C J 25°C -55°C V = 0V GS SD Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. 2 2.5 3 3.5 4 0 3 6 9 12 15 V , GATE TO SOURCE VOLTAGE (V) I = 0.2A GS 125°C 25°C D -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 1.8 T , JUNCTION TEMPERATURE (°C) J V = 2.7 V GS I = 0.2A D 0 0.5 1 1.5 2 2.5 3 0 0.1 0.2 0.3 0.4 0.5 V , DRAIN-SOURCE VOLTAGE (V) 3.5 2.7 2.5 V = 4.5V GS 4.0 2.0 1.5 DS 3.0 |
Numéro de pièce similaire - FDC6322C |
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Description similaire - FDC6322C |
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