FDC3601N datasheet(3/5 Pages) FAIRCHILD

No de pièce	FDC3601N

Description	Dual N-Channel 100V Specified PowerTrench MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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3 / 5 page

FDC3601N Rev C(W)

Typical Characteristics

0

1

2

3

4

02468

VDS, DRAIN-SOURCE VOLTAGE (V)

5.0V

4.0V

4.5V

V

GS = 10V

6.0V

0.8

1

1.2

1.4

1.6

0

123

4

ID, DRAIN CURRENT (A)

VGS = 4.0V

4.5V

5.0V

10V

6.0V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.2

0.6

1

1.4

1.8

2.2

2.6

-50

-25

0

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (

oC)

I

D = 1.0A

V

GS =10V

0.25

0.5

0.75

1

1.25

2468

10

VGS, GATE TO SOURCE VOLTAGE (V)

I

D = 0.5A

TA = 125

oC

T

A = 25

oC

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

1.5

3

4.5

6

1.5

2.5

3.5

4.5

5.5

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125

oC

25

oC

VDS = 5V

-55

oC

0.0001

0.001

0.01

0.1

1

10

0

0.2

0.4

0.6

0.8

1

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

TA = 125

oC

25

oC

-55

oC

V

GS = 0V

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

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