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AM4528C Fiches technique(PDF) 1 Page - Analog Power

No de pièce AM4528C
Description  P & N-Channel 30-V (D-S) MOSFET
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Fabricant  ANALOGPOWER [Analog Power]
Site Internet  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM4528C Fiches technique(HTML) 1 Page - Analog Power

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AM4528C
Analog Power
September, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4528_F
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
VDS (V)
rDS(on) m(Ω)ID (A)
28 @ VGS = 4.5V
7.2
18 @ VGS = 10V
8.5
250 @ VGS = -2.5V
-2.6
170 @ VGS = -4.5V
-3.2
30
PRODUCT SUMMARY
-20
P & N-Channel 30-V (D-S) MOSFET
•Low r
DS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter
applications
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol
Maximum Units
Maximum Junction-to-Case
a
t <= 5 sec
RθJC
40
oC/W
Maximum Junction-to-Ambient
a
t <= 5 sec
RθJA
60
oC/W
THERMAL RESISTANCE RATINGS
Parameter
1
2
3
4
7
8
5
6
Symbol N-Channel
P-Channel Units
VDS
30
-20
VGS
20
-12
TA=25
oC
10
-3.5
TA=70
oC7
-2.3
IDM
±50
±50
IS
2.3
-2.1
A
TA=25
oC
2.1
2.1
TA=70
oC1.3
1.3
TJ, Tstg
-55 to 150
oC
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC UNLESS OTHERWISE NOTED)
Parameter
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
Continuous Drain Current
a
ID
A
Power Dissipation
a
PD
Operating Junction and Storage Temperature Range
W


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