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AM4528C Fiches technique(PDF) 1 Page - Analog Power |
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AM4528C Fiches technique(HTML) 1 Page - Analog Power |
1 / 4 page 1 AM4528C Analog Power September, 2003 - Rev. A PRELIMINARY Publication Order Number: DS-AM4528_F These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. VDS (V) rDS(on) m(Ω)ID (A) 28 @ VGS = 4.5V 7.2 18 @ VGS = 10V 8.5 250 @ VGS = -2.5V -2.6 170 @ VGS = -4.5V -3.2 30 PRODUCT SUMMARY -20 P & N-Channel 30-V (D-S) MOSFET •Low r DS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SO-8 Surface Mount Package Saves Board Space • High power and current handling capability • Low side high current DC-DC Converter applications Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Maximum Units Maximum Junction-to-Case a t <= 5 sec RθJC 40 oC/W Maximum Junction-to-Ambient a t <= 5 sec RθJA 60 oC/W THERMAL RESISTANCE RATINGS Parameter 1 2 3 4 7 8 5 6 Symbol N-Channel P-Channel Units VDS 30 -20 VGS 20 -12 TA=25 oC 10 -3.5 TA=70 oC7 -2.3 IDM ±50 ±50 IS 2.3 -2.1 A TA=25 oC 2.1 2.1 TA=70 oC1.3 1.3 TJ, Tstg -55 to 150 oC Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W |
Numéro de pièce similaire - AM4528C |
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Description similaire - AM4528C |
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