AM5920N datasheet(1/3 Pages) ANALOGPOWER

No de pièce	AM5920N

Description	Dual N-Channel 20-V (D-S) MOSFET

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AM5920N

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM5920_A

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on) m(Ω)ID (A)

58 @ VGS = 4.5V

5.0

82 @ VGS = 2.5V

4.2

PRODUCT SUMMARY

20

Dual N-Channel 20-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

CF1206-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol

Limit

Units

VDS

20

VGS

± 8

TA=25

oC5.0

TA=70

oC4.1

IDM

± 30

IS

1.7

A

TA=25

oC2.1

TA=70

oC1.3

TJ, Tstg -55to150

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTEMAXIMUMRATINGS(TA = 25

oCUNLESSOTHERWISENOTED)

Parameter

PulsedDrainCurrent

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous DrainCurrent

a

ID

A

Power Dissipation

a

PD

OperatingJunctionandStorage Temperature Range

W

Symbol

Maximum

Units

t <= 10 sec

62.5

oC/W

Steady State

80

oC/W

THERMAL RESISTANCE RATINGS

Parameter

RθJA

Maximum Junction-to-Ambient

a

S1

G1

S2

G2

1

2

3

4

CF1206-8

Top View

D

1

D

1

D

2

D

2

8

7

6

5

D

1

S

1

G

1

N-Channel MOSFET

D

2

S

2

G

2

N-Channel MOSFET

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