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BDW93CF Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce BDW93CF
Description  Hammer Drivers, Audio Amplifiers Applications
Download  4 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BDW93CF Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
Rev. A, February 2000
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW=300
µs, duty Cycle =1.5% Pulsed
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
IC
Collector Current (DC)
12
A
ICP
*Collector Current (Pulse)
15
A
IB
Base Current
0.2
A
PC
Collector Dissipation (TC=25°C)
30
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO(sus)
* Collector-Emitter Sustaining Voltage
IC = 100mA, IB = 0
100
V
ICBO
Collector Cut-off Current
VCB = 100V, IE = 0
100
µA
ICEO
Collector Cut-off Current
VCE = 100V, IB = 0
1
mA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
2
mA
hFE
* DC Current Gain
VCE = 3V, IC = 3A
VCE = 3V, IC = 5A
VCE = 3V, IC = 10A
1000
750
100
20000
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 5A, IB = 20mA
IC = 10A, IB = 100mA
2
3
V
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 5A, IB = 20mA
IC = 10A, IB = 100mA
2.5
4
V
V
VF
* Parallel Diode Forward Voltage
IF = 5A
IF = 10A
1.3
1.8
2
4
V
V
BDW93CF
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94CF respectively
1
1.Base
2.Collector
3.Emitter
TO-220F


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