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FDN8601 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN8601 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C www.fairchildsemi.com 2 Electrical Characteristics T J = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 100 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C 68 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 2.0 3.0 4.0 V 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C -8 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 1.5 A 85.4 109 m : VGS = 6 V, ID = 1.2 A 117 175 VGS = 10 V, ID = 1.5 A, TJ = 125 °C 143 183 gFS Forward Transconductance VDS = 10 V, ID = 1.5 A 8 S (Note 2) Dynamic Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz 156 210 pF Coss Output Capacitance 47 65 pF Crss Reverse Transfer Capacitance 2.7 5 pF Rg Gate Resistance 1.0 : Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 1.5 A, VGS = 10 V, RGEN = 6 : 4.3 10 ns tr Rise Time 1.3 10 ns td(off) Turn-Off Delay Time 7.8 16 ns tf Fall Time 3.4 10 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 50 V, ID = 1.5 A 35 nC Qg Total Gate Charge VGS = 0 V to 5 V 1.8 3 nC Qgs Gate to Source Gate Charge 0.9 nC Qgd Gate to Drain “Miller” Charge 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.5 A (Note 2) 0.81 1.3 V trr Reverse Recovery Time IF = 1.5 A, di/dt = 100 A/Ps 29 46 ns Qrr Reverse Recovery Charge 15 27 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V. 80 °C/W when mounted on a 1 in2 pad of 2 oz copper a) 180 °C/W when mounted on a minimum pad. b) |
Numéro de pièce similaire - FDN8601 |
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