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FDN8601 Fiches technique(PDF) 3 Page - Fairchild Semiconductor

No de pièce FDN8601
Description  N-Channel PowerTrench짰 MOSFET 100 V, 2.7 A, 109 m
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN8601 Fiches technique(HTML) 3 Page - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
www.fairchildsemi.com
3
Typical Characteristics T
J = 25 °C unless otherwise noted
Figure 1.
01
23
45
0
3
6
9
12
V
GS = 7 V
V
GS = 6 V
V
GS = 10 V
PULSE DURATION = 80
Ps
DUTY CYCLE = 0.5% MAX
V
GS = 5 V
V
GS = 8 V
V
DS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
0
369
12
0
1
2
3
4
5
V
GS = 5 V
PULSE DURATION = 80
Ps
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
V
GS = 7 V
V
GS = 8 V
V
GS = 6 V
V
GS = 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
-75
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 1.5 A
VGS = 10 V
TJ, JUNCTION TEMPERATURE
(oC)
vs Junction Temperature
Figure 4.
45
67
8
9
10
0
100
200
300
400
500
TJ = 125 oC
ID = 1.5 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
Ps
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
23
456
78
0
3
6
9
12
TJ = 25 oC
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80
Ps
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
20
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current


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