©2002 Fairchild Semiconductor Corporation

Rev. A, August 2002

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

* Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2.0%

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

-30

V

Collector-Base Voltage

-45

V

Emitter-Base Voltage

-5.0

V

Collector Current (DC)-

- Continuous

-500

mA

Operating and Storage Junction Temperature Range

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

Collector-Emitter Voltage

-30

V

Collector-Base Voltage

-45

V

Emitter-Base Voltage

-5.0

V

Collector Cut-off Current

-15

nA

Emitter Cut-off Current

-15

nA

On Characteristics *

DC Current Gain

40

80

400

Collector-Emitter Saturation Voltage

-0.25

-0.6

V

Base-Emitter Saturation Voltage

-1.1

V

Base-Emitter On Voltage

-0.6

-0.72

V

Small Signal Characteristics

Current gain Bandwidth Product

f = 100MHz

200

MHz

NF

Noise Figure

R

10

dB

Small Signal Current Gain

f = 1.0KHz

80

BC213L

PNP General Purpose Amplifier

• This device is deisgned for use as general purpose amplifiers and

switches requiring collector currents to 300mA.

• Sourced from process 68.

• See PN200 for Characteristics.

1. Emitter 2. Collector 3. Base

TO-92

1