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ACE9926B Fiches technique(PDF) 2 Page - ACE Technology Co., LTD.

No de pièce ACE9926B
Description  Dual N-Channel Enhancement Mode Field Effect Transistor
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Fabricant  ACE [ACE Technology Co., LTD.]
Site Internet  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE9926B Fiches technique(HTML) 2 Page - ACE Technology Co., LTD.

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ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
VER 1.2
2
Ordering information
ACE9926B XX + H
Electrical Characteristics
TA=25
OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250uA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
uA
Gate Leakage Current
IGSS
VGS=±12V, VDS=0V
100
nA
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6A
21
30
VGS=2.5V, ID=5.2A
30
40
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
0.65
0.78
1
V
Forward Transconductance
gFS
VDS=5V, ID=6A
12
S
Diode Forward Voltage
VSD
VGS=0V, ISD=1.7A
0.8
1.0
V
Maximum Body-Diode Continuous
Current
IS
1.7
A
Switching
Total Gate Charge
Qg
VDS=10V, VGS=4.5V,
ID=6A
6.24
8.11
nC
Gate-Source Charge
Qgs
1.64
2.13
Gate-Drain Charge
Qgd
1.34
1.74
Turn-On Delay Time
td(on)
VGS=4.5V, VDS=10V,
RL=10Ω, RGEN=6Ω
10.4
20.8
ns
Turn-On Rise Time
tr
4.4
8.8
Turn-Off Delay Time
td(off)
27.36
54.72
Turn- Off Rise Time
tf
4.16
8.32
Dynamic
Input Capacitance
Ciss
VDS=8V, VGS=0V
f=1MHz
522.3
pF
Output Capacitance
Coss
98.48
Reverse Transfer Capacitance
Crss
74.69
Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C.
The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
FM : SOP-8
Pb - free
Halogen - free


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