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ACE9926B Fiches technique(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE9926B Fiches technique(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 7 page ACE9926B Dual N-Channel Enhancement Mode Field Effect Transistor VER 1.2 2 Ordering information ACE9926B XX + H Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Gate Leakage Current IGSS VGS=±12V, VDS=0V 100 nA Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=6A 21 30 mΩ VGS=2.5V, ID=5.2A 30 40 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 0.65 0.78 1 V Forward Transconductance gFS VDS=5V, ID=6A 12 S Diode Forward Voltage VSD VGS=0V, ISD=1.7A 0.8 1.0 V Maximum Body-Diode Continuous Current IS 1.7 A Switching Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=6A 6.24 8.11 nC Gate-Source Charge Qgs 1.64 2.13 Gate-Drain Charge Qgd 1.34 1.74 Turn-On Delay Time td(on) VGS=4.5V, VDS=10V, RL=10Ω, RGEN=6Ω 10.4 20.8 ns Turn-On Rise Time tr 4.4 8.8 Turn-Off Delay Time td(off) 27.36 54.72 Turn- Off Rise Time tf 4.16 8.32 Dynamic Input Capacitance Ciss VDS=8V, VGS=0V f=1MHz 522.3 pF Output Capacitance Coss 98.48 Reverse Transfer Capacitance Crss 74.69 Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. FM : SOP-8 Pb - free Halogen - free |
Numéro de pièce similaire - ACE9926B |
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Description similaire - ACE9926B |
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