SI7178DP-T1-GE3 datasheet(5/13 Pages) VISHAY

No de pièce	SI7178DP-T1-GE3

Description	N-Channel 100-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 69951

S-80678-Rev. A, 31-Mar-08

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Vishay Siliconix

Si7178DP

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

14

28

42

56

70

0

255075

100

125

150

TC - Case Temperature (°C)

Package Limited

Power, Junction-to-Case

0

25

50

75

100

125

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.6

1.2

1.8

2.4

3.0

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Numéro de pièce similaire - SI7178DP-T1-GE3

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI7178DP	326Kb / 13P	N-Channel 100-V (D-S) MOSFET Rev. A, 31-Mar-08

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Description similaire - SI7178DP-T1-GE3

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SI7178DP-T1-GE3 Fiches technique(PDF) 5 Page - Vishay Siliconix

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