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STP13NM60N Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STP13NM60N
Description  N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP13NM60N Fiches technique(HTML) 3 Page - STMicroelectronics

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STF/I/P/U/W13NM60N
Electrical ratings
Doc ID 15420 Rev 5
3/21
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220FP I²PAK, TO-220, IPAK, TO-247
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at
TC = 25 °C
11(1)
1.
Limited by maximum junction temperature
11
A
ID
Drain current (continuous) at
TC = 100 °C
6.93(1)
6.93
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
44(1)
44
A
PTOT
Total dissipation at TC = 25 °C
25
90
W
dv/dt (3)
3.
ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;TC=25 °C)
2500
V
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220FP
I²PAK
TO-220
IPAK
TO-247
Rthj-case Thermal resistance junction-case max
5
1.39
°C/W
Rthj-amb
Thermal resistance junction-ambient
max
62.5
62.5
100
50
°C/W
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
3.5
A
EAS
Single pulse avalanche energy
(starting TJ=25 °C, ID=IAS, VDD=50 V)
200
mJ


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