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MMSF7P03HD Fiches technique(PDF) 1 Page - Motorola, Inc |
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MMSF7P03HD Fiches technique(HTML) 1 Page - Motorola, Inc |
1 / 10 page 1 Motorola TMOS Power MOSFET Transistor Device Data Designer's™ Data Sheet Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistors Single HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Miniature SO–8 Surface Mount Package — Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Mounting Information for SO–8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 30 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) ID IDM 7.0 50 Adc Apk Source Current — Continuous @ TA = 25°C IS 2.3 Adc Total Power Dissipation @ TA = 25°C (1) PD 2.5 Watts Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 W) EAS 5000 mJ Thermal Resistance — Junction–to–Ambient R θJA 50 °C/W Maximum Temperature for Soldering T 260 °C DEVICE MARKING S7P03 (1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds) ORDERING INFORMATION Device Reel Size Tape Width Quantity MMSF7P03HDR2 13 ″ 12 mm embossed tape 2500 units Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Order this document by MMSF7P03HD/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1997 Source Source Source Gate CASE 751–05, Style 13 SO–8 1 2 3 4 8 7 6 5 Top View Drain Drain Drain Drain D S G MMSF7P03HD SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 35 mW Motorola Preferred Device ™ REV 2 |
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