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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

TMOS Single P-Channel

Field Effect Transistors

Single HDTMOS are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density TMOS process.

HDTMOS devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc–dc converters, and power management in

portable and battery powered products such as computers,

printers, cellular and cordless phones. They can also be used for

low voltage motor controls in mass storage products such as disk

drives and tape drives.

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

30

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 25°C

ID

IDM

7.0

50

Adc

Apk

Source Current — Continuous @ TA = 25°C

IS

2.3

Adc

Total Power Dissipation @ TA = 25°C (1)

PD

2.5

Watts

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 W)

EAS

5000

mJ

Thermal Resistance — Junction–to–Ambient

R

θJA

50

°C/W

Maximum Temperature for Soldering

T

260

°C

DEVICE MARKING

S7P03

(1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds)

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMSF7P03HDR2

13

″

12 mm embossed tape

2500 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Order this document

by MMSF7P03HD/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Source

Source

Source

Gate

CASE 751–05, Style 13

SO–8

1

2

3

4

8

7

6

5

Top View

Drain

Drain

Drain

Drain

D

S

G

MMSF7P03HD

SINGLE TMOS

POWER MOSFET

30 VOLTS

RDS(on) = 35 mW

Motorola Preferred Device

™

REV 2