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STB28NM50N Fiches technique(PDF) 5 Page - STMicroelectronics |
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STB28NM50N Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 21 page STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Electrical characteristics Doc ID 17432 Rev 2 5/21 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 250 V, ID = 10.5 A RG =4.7 Ω VGS = 10 V (see Figure 18) - 13.6 19 62 52 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 21 84 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 21 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, di/dt = 100 A/µs VDD = 400 V (see Figure 23) - 326 5 30 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, di/dt = 100 A/µs VDD = 400 V, Tj = 150 °C (see Figure 23) - 376 6.2 33.2 ns µC A |
Numéro de pièce similaire - STB28NM50N |
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Description similaire - STB28NM50N |
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