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2N5088 Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce 2N5088
Description  NPN General Purpose Amplifier
Download  7 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N5088 Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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2N5088
2N5089
MMBT5088
MMBT5089
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1
µA to 50 mA.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
2N5088
2N5089
30
25
V
V
VCBO
Collector-Base Voltage
2N5088
2N5089
35
30
V
V
VEBO
Emitter-Base Voltage
4.5
V
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5088
2N5089
*MMBT5088
*MMBT5089
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1Q / 1R
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
 2001 Fairchild Semiconductor Corporation
2N5088/2N5089/MMBT5088/MMBT5089, Rev A


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