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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2N5086 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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2N5086 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Symbol Parameter Value Units VCEO Collector-Emitter Voltage -50 V VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -3.0 V IC Collector current - Continuous -100 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -50 V V(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 V ICEO Collector Cutoff Current VCB = -10V, IE = 0 VCB = -35V, IE = 0 -10 -50 nA nA ICBO Emitter Cutoff Current VEB = -3.0V, IC = 0 -50 nA On Characteristics hFE DC Current Gain IC = -100µA, VCE = -5.0V IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V 5086 5087 5086 5087 5086 5087 150 250 150 250 150 250 500 800 VCE(sat) Collector-Emitter Saturation Voltage IC = -10mA, IB = -1.0mA -0.3 V VBE(on) Base-Emitter On Voltage IC = -1.0mA, VCE = -5.0V -0.85 V Small Signal Characteristics fT Current Gain Bandwidth Product IC = -500µA, VCE = -5.0V, f = 20MHz 40 MHz Ccb Collector-Base Capacitance VCB = -5.0V, IE = 0, f = 100KHz 4.0 pF hfe Small-Signal Current Gain IC = -1.0mA, VCE = -5.0V, f = 1.0KHz 5086 5087 150 250 600 900 NF Noise Figure IC = -100µA, VCE = -5.0V RS = 3.0kΩ, f = 1.0KHz IC = -20µA, VCE = -5.0V RS = 10kΩ f = 10Hz to 15.7KHz 5086 5087 5086 5087 3.0 2.0 3.0 2.0 dB dB dB dB 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. SOT-23 1. Base 2. Emitter 3. Collector 1 2 3 Mark: 2Q TO-92 1 1. Emitter 2. Base 3. Collector |
Numéro de pièce similaire - 2N5086 |
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Description similaire - 2N5086 |
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