1N4454

DO-35

High Conductance Ultra Fast Diode

Sourced from Process 1R. See MMBD1201-1205 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Working Inverse Voltage

50

V

Average Rectified Current

200

mA

DC Forward Current

400

mA

Recurrent Peak Forward Current

600

mA

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

1.0

4.0

A

A

Storage Temperature Range

-65 to +200

°C

Operating Junction Temperature

175

°C

Symbol

Characteristic

Max

Units

1N4454

Total Device Dissipation

Derate above 25

°C

500

3.33

mW

mW/

°C

Thermal Resistance, Junction to Ambient

300

°C/W

Discrete POWER & Signal

Technologies

©1997 Fairchild Semiconductor Corporation