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MMDF6N02HD Fiches technique(PDF) 2 Page - Motorola, Inc

No de pièce MMDF6N02HD
Description  DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS
Download  10 Pages
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Fabricant  MOTOROLA [Motorola, Inc]
Site Internet  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMDF6N02HD Fiches technique(HTML) 2 Page - Motorola, Inc

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Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
24.3
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
2.5
25
µAdc
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
IGSS
0.3
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.5
0.8
2.86
1.2
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (3)
(VGS = 4.5 Vdc, ID = 6.0 Adc)
(VGS = 2.5 Vdc, ID = 3.0 Adc)
RDS(on)
28
42
35
49
m
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc)
gFS
7.0
8.6
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
10 Vdc V
0 Vdc
Ciss
515
572
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
345
372
Transfer Capacitance
f = 1.0 MHz)
Crss
150
178
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
10 Vd
I
3 5 Ad
td(on)
12
15
ns
Rise Time
(VDD = 10 Vdc, ID = 3.5 Adc,
VGS =4 0Vdc
tr
96
103
Turn–Off Delay Time
VGS = 4.0 Vdc,
RG = 10 Ω)
td(off)
100
108
Fall Time
G
)
tf
130
140
Gate Charge
See Figure 8
(V
16 Vd
I
6 0 Ad
QT
11
12
nC
See Figure 8
(VDS = 16 Vdc, ID = 6.0 Adc,
Q1
1.2
( DS
, D
,
VGS = 4.0 Vdc)
Q2
6.1
Q3
3.9
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.84
0.77
1.2
Vdc
Reverse Recovery Time
(I
6 0 Ad
V
0 Vd
trr
102
ns
(IS = 6.0 Adc, VGS = 0 Vdc,
ta
36
( S
,
GS
,
dIS/dt = 100 A/µs)
tb
66
Reverse Recovery Stored Charge
QRR
0.150
µC
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA


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