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MMDF4N01HD Fiches technique(PDF) 3 Page - Motorola, Inc |
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MMDF4N01HD Fiches technique(HTML) 3 Page - Motorola, Inc |
3 / 10 page MMDF4N01HD 3 Motorola TMOS Power MOSFET Transistor Device Data TYPICAL ELECTRICAL CHARACTERISTICS VGS = 4.5 V ID = 4 A 8 TJ = 25°C 4.5 V VGS = 8 V 3.1 V 2.7 V 2.5 V 2.3 V 2.1 V 1.9 V 1.5 V 1.7 V 1.3 V TJ = 25°C VGS = 2.7 V 4.5 V 0 0.4 0.8 1.2 1.6 2 0.2 0.6 1 1.4 1.8 0 0.4 0.8 1.2 1.6 2 0.2 0.6 1 1.4 1.8 0 2 4 6 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics 1 1.2 1.4 2.2 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0 2 4 8 0.03 0.04 0.05 0.06 0.07 0 2 4 8 0.030 0.035 0.040 0.050 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 3. On–Resistance versus Gate–To–Source Voltage ID, DRAIN CURRENT (AMPS) Figure 4. On–Resistance versus Drain Current and Gate Voltage 0 2 4 12 100 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On–Resistance Variation with Temperature VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage Current versus Voltage VDS ≥ 10 V VGS = 0 V TJ = 25°C ID = 2 A 1.6 1.8 2 6 – 50 – 25 0 25 50 75 100 125 150 TJ = 125°C 10 8 10 100 °C 0 2 4 8 6 25 °C 100 °C TJ = – 55°C 0.045 6 6 0 0.5 1 2 1.5 |
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