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MMDF1N05E Fiches technique(PDF) 2 Page - Motorola, Inc |
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MMDF1N05E Fiches technique(HTML) 2 Page - Motorola, Inc |
2 / 6 page MMDF1N05E 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0, ID = 250 µA) V(BR)DSS 50 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 250 µAdc Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 — 3.0 Vdc Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc) (VGS = 4.5 Vdc, ID = 0.6 Adc) RDS(on) RDS(on) — — — — 0.30 0.50 Ohms Forward Transconductance (VDS = 15 V, ID = 1.5 A) gFS — 1.5 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Ciss — 330 — pF Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Coss — 160 — Reverse Transfer Capacitance f = 1.0 MHz) Crss — 50 — SWITCHING CHARACTERISTICS(2) Turn–On Delay Time (VDD = 10 V, ID = 1.5 A, RL = 10 Ω, VG = 10 V, RG = 50 Ω) td(on) — — 20 ns Rise Time (VDD = 10 V, ID = 1.5 A, RL = 10 Ω, VG = 10 V, RG = 50 Ω) tr — — 30 Turn–Off Delay Time (VDD = 10 V, ID = 1.5 A, RL = 10 Ω, VG = 10 V, RG = 50 Ω) td(off) — — 40 Fall Time tf — — 25 Total Gate Charge (VDS = 10 V, ID = 1.5 A, VGS = 10 V) Qg — 12.5 — nC Gate–Source Charge (VDS = 10 V, ID = 1.5 A, VGS = 10 V) Qgs — 1.9 — Gate–Drain Charge VGS = 10 V) Qgd — 3.0 — SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C) Forward Voltage(1) (IS = 1.5 A, VGS = 0 V) (dIS/dt = 100 A/µs) VSD — — 1.6 V Reverse Recovery Time (IS = 1.5 A, VGS = 0 V) (dIS/dt = 100 A/µs) trr — 45 — ns (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. (2) Switching characteristics are independent of operating junction temperature. |
Numéro de pièce similaire - MMDF1N05E |
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Description similaire - MMDF1N05E |
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