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MMDF1N05E Fiches technique(PDF) 2 Page - Motorola, Inc

No de pièce MMDF1N05E
Description  DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM
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Fabricant  MOTOROLA [Motorola, Inc]
Site Internet  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMDF1N05E Fiches technique(HTML) 2 Page - Motorola, Inc

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MMDF1N05E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
V(BR)DSS
50
Vdc
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
IDSS
250
µAdc
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
3.0
Vdc
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.6 Adc)
RDS(on)
RDS(on)
0.30
0.50
Ohms
Forward Transconductance (VDS = 15 V, ID = 1.5 A)
gFS
1.5
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
330
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Coss
160
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
50
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 10 V, ID = 1.5 A, RL = 10 Ω,
VG = 10 V, RG = 50 Ω)
td(on)
20
ns
Rise Time
(VDD = 10 V, ID = 1.5 A, RL = 10 Ω,
VG = 10 V, RG = 50 Ω)
tr
30
Turn–Off Delay Time
(VDD = 10 V, ID = 1.5 A, RL = 10 Ω,
VG = 10 V, RG = 50 Ω)
td(off)
40
Fall Time
tf
25
Total Gate Charge
(VDS = 10 V, ID = 1.5 A,
VGS = 10 V)
Qg
12.5
nC
Gate–Source Charge
(VDS = 10 V, ID = 1.5 A,
VGS = 10 V)
Qgs
1.9
Gate–Drain Charge
VGS = 10 V)
Qgd
3.0
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage(1)
(IS = 1.5 A, VGS = 0 V)
(dIS/dt = 100 A/µs)
VSD
1.6
V
Reverse Recovery Time
(IS = 1.5 A, VGS = 0 V)
(dIS/dt = 100 A/µs)
trr
45
ns
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%.
(2) Switching characteristics are independent of operating junction temperature.


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