APT10M25BVFR datasheet(3/4 Pages) ADPOW

No de pièce	APT10M25BVFR

Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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Fabricant	ADPOW [Advanced Power Technology]

Site Internet	http://www.advpowertech.com

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V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (

°C)

T

J

, JUNCTION TEMPERATURE (

°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (

°C)

T

C

, CASE TEMPERATURE (

°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

APT10M25BVFR

0

10

20

30

40

50

0

123

45

0

2

4

6

8

10

0

25

50

75

100

125

150

25

50

75

100

125

150

-50

-25

0

25

50

75

100 125 150

-50

-25

0

25

50

75

100 125 150

-50

-25

0

25

50

75

100 125 150

I

D

= 0.5 I

D

[Cont.]

V

GS

= 10V

150

125

100

75

50

25

0

1.2

1.1

1.0

0.9

0.8

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

150

125

100

75

50

25

0

150

125

100

75

50

25

0

80

60

40

20

0

2.00

1.75

1.50

1.25

1.00

0.75

0.50

VDS> ID (ON) x RDS (ON)MAX.

250

µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

VGS=10V & 15V

6V

TJ = +25°C

TJ = -55°C

TJ = +125°C

TJ = +25°C

TJ = -55°C

7V

5.5V

4.5V

5V

VGS=20V

VGS=10V

VGS=15V

10V

6.5V

NORMALIZED TO

V

GS

= 10V @ 0.5 I

D

[Cont.]

4V

6V

7V

5.5V

4.5V

5V

6.5V

4V

Numéro de pièce similaire - APT10M25BVFR

Fabricant	No de pièce	Fiches technique	Description
Advanced Power Technolo...	APT10M25BVR	65Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT10M25BVFR Fiches technique(PDF) 3 Page - Advanced Power Technology

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