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CSD87312Q3E Fiches technique(PDF) 3 Page - Texas Instruments

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No de pièce CSD87312Q3E
Description  Dual 30-V N-Channel NexFET Power MOSFETs
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

CSD87312Q3E Fiches technique(HTML) 3 Page - Texas Instruments

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VDS - Drain-to-Source Voltage (V)
VGS =8V
VGS =6V
VGS =4.5V
G001
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VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
M0137-01
SOURCE
GATE
DRAIN
M0137-02
SOURCE
GATE
DRAIN
CSD87312Q3E
www.ti.com
SLPS333 – NOVEMBER 2012
Max RθJA = 63°C/W
Max RθJA = 165°C/W
when mounted on
when mounted on a
1 inch2 (6.45 cm2) of 2-
minimum pad area of
oz. (0.071-mm thick)
2-oz. (0.071-mm thick)
Cu.
Cu.
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
Copyright © 2012, Texas Instruments Incorporated
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