1N4448_12 datasheet(2/5 Pages) RECTRON

No de pièce	1N4448

Description	SILICON PLANAR ZENER DIODE

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Fabricant	RECTRON [Rectron Semiconductor]

Site Internet	http://www.rectron.com

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RECTRON

TJ, JUNCTION TEMPERATURE (

OC)

VF, INSTANTANEOUS FORWARD VOLTAGE(V)

0

100

1

100

10

10,000

1000

0.01

0.1

1.0

10

100

1000

200

2

1

0

RATING AND CHARACTERISTICS CURVES ( 1N4448 )

Figure1 Forward Characteristics

Figure2 Leakage Current vs Junction Temperature

VR =20V

Numéro de pièce similaire - 1N4448_12

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	1N4448	104Kb / 4P	Small Signal Fast Switching Diodes Rev. 1.1, 17-Aug-10
Micro Commercial Compon...	1N4448	431Kb / 4P	500mW 100Volt Switching Diode

Fabricant	No de pièce	Fiches technique	Description
Semtech Corporation	2.2HC	239Kb / 4P	SILICON PLANAR ZENER DIODE
Rectron Semiconductor	BZM55C-BS	155Kb / 5P	SILICON PLANAR ZENER DIODE
Semtech Corporation	2.0HS	280Kb / 4P	SILICON PLANAR ZENER DIODE
Rectron Semiconductor	1N4728A	178Kb / 5P	SILICON PLANAR ZENER DIODE
	BZX55C2V0	196Kb / 5P	SILICON PLANAR ZENER DIODE
	BZX55C-BS	278Kb / 5P	SILICON PLANAR ZENER DIODE
Diodes Incorporated	ZPD1	63Kb / 3P	SILICON PLANAR ZENER DIODE DS21402 Rev. E-3
Rectron Semiconductor	BZV55C-BS	196Kb / 5P	SILICON PLANAR ZENER DIODE
KEC(Korea Electronics)	SMAZ3.6V-36V	365Kb / 3P	ZENER DIODE SILICON PLANAR DIODE
KEC(Korea Electronics)	Z02W2.0V	92Kb / 5P	ZENER DIODE SILICON EPITAXIAL PLANAR DIODE