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ADP1147AN-33 Fiches technique(PDF) 8 Page - Analog Devices

No de pièce ADP1147AN-33
Description  High Efficiency Step-Down Switching Regulator Controllers
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Fabricant  AD [Analog Devices]
Site Internet  http://www.analog.com
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ADP1147AN-33 Fiches technique(HTML) 8 Page - Analog Devices

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ADP1147-3.3/ADP1147-5
–8–
REV. 0
The formula used to calculate the continuous operating fre-
quency is:
f
=
1
VOUT +V D
V IN +V D
tOFF
tOFF = 1.3 × 10
4
× C
T ×
V REG
VOUT
VREG is the value of the desired output voltage. VOUT is the ac-
tual measured value of the output voltage. When in regulation
VREG/VOUT is equal to 1. The switching frequency of the ADP1147
decreases as the input voltage decreases. The ADP1147 will
reduce the tOFF time by increasing the discharge current in ca-
pacitor CT if the input to output voltage differential falls below
1.5 volts. This is to eliminate the possible occurrence of audible
switching prior to dropout.
Now that the operating frequency has been determined and the
value selected for CT, the required inductance for inductor L
can be computed. The inductor L should be chosen so it will
generate no more than 25 mV/RSENSE of peak-to-peak inductor
ripple current.
The following equation is used to determine the required value
for inductor L:
25 mV
RSENSE
=
(VOUT +V D )× tOFF
LMIN
or
LMIN =
(VOUT +V D )× tOFF × RSENSE
25 mV
Substituting for tOFF above gives the minimum required induc-
tor value of:
LMIN = 5.1 × 10
5
× R
SENSE × CT × VREG
The ESR requirements for the output storage capacitor can be
relaxed by increasing the inductor value, but efficiency due to
copper losses will be reduced. Conversely, the use of too low an
inductance may allow the inductor current to become discon-
tinuous, causing the device to enter the power savings mode
prematurely. As a result of this the power savings threshold is
lowered and the efficiency at lower current levels is severely
reduced.
Inductor Core Considerations
Now that the minimum inductance value for L has been deter-
mined, the inductor core selection can be made. High efficiency
converters generally cannot afford the core losses found in low
cost powdered iron cores. This forces the use of a more expen-
sive ferrite, molypermalloy, or Kool Mu
® cores. The typical
efficiency in Figure 1 reflects the use of a molypermalloy core.
The cost of the inductor can be cut in half by Using a Kool Mu
core type CTX 50-4 by Coiltronics, but the efficiency will be
approximately 1%–2% less. The actual core losses are not de-
pendent on the size of the core, but on the amount of induc-
tance. An increase in inductance will yield a decrease in the
amount of core loss. Although this appears to be desirable, more
inductance requires more turns of wire with added resistance
and greater copper losses.
Kool Mu is a registered trademark of Magnetics, Inc.
Using a ferrite cores in a design can produce very low core
losses, allowing the designer to focus on minimizing copper loss
and core saturation problems. Ferrite cores exhibit a condition
known as “Hard Saturation,” which results in an abrupt collapse
of the inductance when the peak design current is exceeded.
This causes the inductor ripple current to rise sharply, the out-
put ripple voltage to increase and the power savings mode of
operation to be erroneously activated. To prevent this from
occurring the core should never be allowed to saturate.
Molypermalloy (from Magnetics, Inc.) is a very good, low loss
core material for a toroids, but is more expensive than a ferrite
core. A reasonable compromise between price and performance,
from the same manufacturer is Kool Mu. Toroidal cores are
extremely desirable where efficient use of available space and
several layers of wire are required. They are available in various
surface mount configurations from Coiltronics Inc. and other
companies.
Power MOSFET Selection and Considerations
The ADP1147 requires the use of an external P-channel
MOSFET. The major parameters to be considered when select-
ing the power MOSFET are the threshold voltage VGS(TH) and
the on resistance of the device RDS(ON).
The minimum input voltage determines if the design requires a
logic level or a standard threshold MOSFET. In applications
where the input voltage is > 8 volts, a standard threshold
MOSFET with a VGS(TH) of < 4 volts can be used. In designs
where VIN is < 8 volts, a logic level MOSFET with a VGS(TH) of
< 2.5 volts is recommended. Note: If a logic level MOSFET
is selected, the supply voltage to the ADP1147 must not
exceed the absolute maximum for the VGS of the MOSFET
(e.g., <
± 8 volts for IRF7304).
The RDS(ON) requirement for the selected power MOSFET is
determined by the maximum output current (IMAX). An as-
sumption is made that when the ADP1147 is operating in the
continuous mode, either the Schottky Diode or the MOSFET
are always conducting the average load current. The following
formulas are used to determine the duty cycle of each of the
components.
P Channel MOSFET Duty Cycle
=
VOUT +V D
V IN +V D
Schottky Diode Duty Cycle
=
V IN –V D
V IN +V D
Once the Duty Cycle is known, the RDS(ON) requirement for the
Power MOSFET can be determined by:
RDS(ON) =
(V IN +V D )× PP
(VOUT +V D )× IMAX
2 ×(1+δ
P )
where PP is the max allowable power dissipation and where δP is
the temperature dependency of RDS(ON) for the MOSFET. Effi-
ciency and thermal requirements will determine the value of PP,
(refer to Efficiency section). MOSFETS usually specify the 1+
δ
as a normalized RDS(ON ) vs. temperature trace, and
δ can be
approximated to 0.007/
°C for most low voltage MOSFETs.
Output Diode Considerations
When selecting the output diode careful consideration should be
given to peak current and average power dissipation so the
maximum specifications for the diode are not exceeded.


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