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BAY135_12 Datasheet(Fiches technique) 2 Page - Vishay Siliconix

Numéro de pièce BAY135_12
Description  Small Signal Fast Switching Diode, High Voltage
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
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BAY135
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 02-Aug-12
2
Document Number: 85552
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 30 mA
VF
1000
mV
Reverse current
E
 300 Ix, V
R
IR
3nA
E
 300 Ix, V
R, Tj = 125 °C
IR
0.5
μA
E
 300 Ix, V
R = 60 V
IR
1nA
Breakdown voltage
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
140
V
Diode capacitance
VR = 0 V, f = 1 MHz,
CD
5pF
04080
120
160
1
10
100
1000
10 000
Tj - Junction Temperature (°C)
200
94 9079
Scattering Limit
VR = VRRM
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
VF - Forward Voltage (V)
2.0
94 9078
Scattering Limit
Tj =25 °C
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024]
3.9 max. [0.154]
26 min. [1.024]
Cathode Identification
3.1 min. [0.120]




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