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AD589LH Fiches technique(PDF) 2 Page - Analog Devices

No de pièce AD589LH
Description  Two-Terminal IC 1.2 V Reference
Download  4 Pages
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Fabricant  AD [Analog Devices]
Site Internet  http://www.analog.com
Logo AD - Analog Devices

AD589LH Fiches technique(HTML) 2 Page - Analog Devices

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AD589–SPECIFICATIONS
–2–
(typical @ IIN = 500 A and TA = +25 C unless otherwise noted)
AD589 CHIP DIMENSIONS AND PAD LAYOUT
0.040
(1.016)
0.060
(1.524)
THE AD589 IS AVAILABLE IN CHIP FORM WITH FULLY TESTED
AND GUARANTEED SPECIFICATIONS. CONSULT FACTORY FOR
AVAILABLE GRADES AND PRICING.
Model
AD589JH/JR
AD589KH
AD589LH
AD589MH
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
OUTPUT VOLTAGE, TA = +25°C
1.200
1.235
1.250
1.200
1.235
1.250
1.200
1.235 1.250
1.200
1.235 1.250
V
OUTPUT VOLTAGE CHANGE vs.
CURRENT
(50
µA–5 mA)
5
5
5
5
mV
DYNAMIC OUTPUT IMPEDANCE
0.6
2
0.6
2
0.6
2
0.6
2
RMS NOISE VOLTAGE
10 Hz < f < 10 kHz
5
5
5
5
µV
TEMPERATURE COEFFICIENT
1
100
50
25
10
ppm/
°C
TURN-ON SETTLING TIME TO 0.1%
25
25
25
25
µs
OPERATING CURRENT
2
0.05
5
0.05
5
0.05
5
0.05
5mA
OPERATING TEMPERATURE
0
+70
0
+70
0
+70
0
+70
°C
PACKAGE OPTION
3
Metal Can (H-02A)
AD589JH
AD589KH
AD589LH
AD589MH
SOIC (R-8)
AD589JR
Model
AD589SH
AD589TH
AD589UH
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
OUTPUT VOLTAGE, TA = +25°C
1.200
1.235
1.250
1.200
1.235
1.250
1.200
1.235 1.250
V
OUTPUT VOLTAGE CHANGE vs.
CURRENT
(50
µA–5 mA)
5
5
5
mV
DYNAMIC OUTPUT IMPEDANCE
0.6
2
0.6
2
0.6
2
RMS NOISE VOLTAGE
10 Hz < f < 10 kHz
5
5
5
µV
TEMPERATURE COEFFICIENT
1
100
50
25
ppm/
°C
TURN-ON SETTLING TIME TO 0.1%
25
25
25
µs
OPERATING CURRENT
2
0.05
5
0.05
5
0.05
5mA
OPERATING TEMPERATURE
–55
+125
–55
+125
–25
+125
°C
PACKAGE OPTION
3
Metal Can (H-02A)
AD589SH
AD589TH
AD589UH
SOIC (SO-8)
AD589JR
NOTES
1See the following page for explanation of temperature coefficient measurement method.
2Optimum performance is obtained at currents below 500
µA. For current operation below 200 µA, stray shunt capacitances should be limited
to 20 pF or increased to 1
µF. If strays can not be avoided, operation at 500 µA and a shunt capacitor of at least 1000 pF are recommended.
3H = Hermetic Metal Can; SO = SOIC.
Specifications shown in boldface are tested on all production units at final electrical test.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS
Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Power Dissipation
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . 125 mW
Storage Temperature . . . . . . . . . . . . . . . . . . . –65
°C to +175°C
Operating Junction Temperature Range . . . . –55
°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . +300
°C
NOTE
1Absolute maximum power dissipation is limited by maximum current through the
device. Maximum rating at elevated temperatures must be computed assuming
TJ ≤ 150°C, and θJA = 400 = C/W.
REV. B


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