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CSD18531Q5A Fiches technique(PDF) 3 Page - Texas Instruments

No de pièce CSD18531Q5A
Description  The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

CSD18531Q5A Fiches technique(HTML) 3 Page - Texas Instruments

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VDS - Drain-to-Source Voltage - V
VGS =10V
VGS =6.5V
VGS =4.5V
G001
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VGS - Gate-to-Source Voltage - V
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
GATE
Source
DRAIN
M0137-01
GATE
Source
DRAIN
M0137-02
CSD18531Q5A
www.ti.com
SLPS321B – JUNE 2012 – REVISED OCTOBER 2012
Max RθJA = 50°C/W
Max RθJA = 121°C/W
when mounted on
when mounted on a
1 inch2 (6.45 cm2) of 2-
minimum pad area of
oz. (0.071-mm thick)
2-oz. (0.071-mm thick)
Cu.
Cu.
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Figure 2. Transient Thermal Impedance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 3. Saturation Characteristics
Figure 4. Transfer Characteristics
Copyright © 2012, Texas Instruments Incorporated
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