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FM25L04B-GTR Fiches technique(PDF) 1 Page - Cypress Semiconductor

No de pièce FM25L04B-GTR
Description  4Kb Serial 3V F-RAM Memory
Download  14 Pages
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25L04B-GTR Fiches technique(HTML) 1 Page - Cypress Semiconductor

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AEC Q100 Grade 1 Compliant
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s
internal qualification testing and has reached production status.
Cypress Semiconductor Corporation
198 Champion Court
San Jose, CA 95134-1709
408-943-2600
Document Number: 001-86152 Rev. *A
Revised May 07, 2013
FM25L04B – Automotive Temp.
4Kb Serial 3V F-RAM Memory
Features
4K bit Ferroelectric Nonvolatile RAM
Organized as 512 x 8 bits
High Endurance 10 Trillion (10
13) Read/Writes
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Serial Peripheral Interface - SPI
Up to 10 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 3.0-3.6V
6 A Standby Current (+85C)
Industry Standard Configuration
Automotive Temperature -40 C to +125 C
o
Qualified to AEC Q100 Specification
8-pin “Green”/RoHS SOIC Package
Description
The FM25L04B is a 4-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for years
while eliminating the complexities, overhead, and
system
level
reliability
problems
caused
by
EEPROM and other nonvolatile memories.
The FM25L04B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been transferred to the device. The next bus cycle
may commence without the need for data polling.
The FM25L04B is capable of supporting 10
13
read/write cycles, or 10 million times more write
cycles than EEPROM.
These capabilities make the FM25L04B ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L04B provides substantial benefits to users
of
serial
EEPROM
as
a
hardware
drop-in
replacement. The FM25L04B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an automotive
temperature range of -40°C to +125°C.
Pin Configuration
Pin Name
Function
/CS
Chip Select
/WP
Write Protect
/HOLD
Hold
SCK
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
VDD
Supply Voltage
VSS
Ground
Ordering Information
FM25L04B-GA
“Green”/RoHS 8-pin SOIC,
Automotive Grade 1
FM25L04B-GATR
“Green”/RoHS 8-pin SOIC,
Automotive Grade 1,
Tape & Reel
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
1
2
3
4
8
7
6
5


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