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FM25L04B-GTR Fiches technique(PDF) 1 Page - Cypress Semiconductor |
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FM25L04B-GTR Fiches technique(HTML) 1 Page - Cypress Semiconductor |
1 / 14 page AEC Q100 Grade 1 Compliant This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s internal qualification testing and has reached production status. Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-86152 Rev. *A Revised May 07, 2013 FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 10 Trillion (10 13) Read/Writes NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Fast Serial Peripheral Interface - SPI Up to 10 MHz Frequency Direct Hardware Replacement for EEPROM SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme Hardware Protection Software Protection Low Power Consumption Low Voltage Operation 3.0-3.6V 6 A Standby Current (+85C) Industry Standard Configuration Automotive Temperature -40 C to +125 C o Qualified to AEC Q100 Specification 8-pin “Green”/RoHS SOIC Package Description The FM25L04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25L04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been transferred to the device. The next bus cycle may commence without the need for data polling. The FM25L04B is capable of supporting 10 13 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the FM25L04B ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25L04B provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The FM25L04B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Device specifications are guaranteed over an automotive temperature range of -40°C to +125°C. Pin Configuration Pin Name Function /CS Chip Select /WP Write Protect /HOLD Hold SCK Serial Clock SI Serial Data Input SO Serial Data Output VDD Supply Voltage VSS Ground Ordering Information FM25L04B-GA “Green”/RoHS 8-pin SOIC, Automotive Grade 1 FM25L04B-GATR “Green”/RoHS 8-pin SOIC, Automotive Grade 1, Tape & Reel CS SO WP VSS VDD HOLD SCK SI 1 2 3 4 8 7 6 5 |
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