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FM23MLD16 Fiches technique(PDF) 3 Page - Cypress Semiconductor |
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FM23MLD16 Fiches technique(HTML) 3 Page - Cypress Semiconductor |
3 / 13 page FM23MLD16 - 512Kx16 FRAM (multi die) Rev. 2.0 June 2012 Page 3 of 13 Functional Truth Table 1 /CE1 CE2 /WE A(18:2) A(1:0) Operation H X X L X X X X X X Standby/Idle ↓ L H ↑ H H V V V V Read L H H No Change Change Page Mode Read L H H Change V Random Read ↓ L H ↑ L L V V V V /CE-Controlled Write 2 L H ↓ V V /WE-Controlled Write 2, 3 L H ↓ No Change V Page Mode Write 4 ↑ L H ↓ X X X X X X Starts Precharge Notes: 1) H=Logic High, L=Logic Low, V=Valid Data, X=Don’t Care. 2) For write cycles, data-in is latched on the rising edge of /CE1 or /WE of the falling edge of CE2, whichever comes first. 3) /WE-controlled write cycle begins as a Read cycle and A(18:3) is latched then. 4) Addresses A(2:0) must remain stable for at least 15 ns during page mode operation. Byte Select Truth Table /OE /LB /UB Operation H X X Read; Outputs Disabled X H H L H L Read; DQ(7:0) Hi-Z L H Read; DQ(15:8) Hi-Z L L Read X H L Write; Mask DQ(7:0) L H Write; Mask DQ(15:8) L L Write |
Numéro de pièce similaire - FM23MLD16 |
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Description similaire - FM23MLD16 |
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