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2N2322 Fiches technique(PDF) 2 Page - Comset Semiconductor |
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2N2322 Fiches technique(HTML) 2 Page - Comset Semiconductor |
2 / 3 page 2n2322 to 2n2326 12/11/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol Ratings 2N2322 2N2323 2N2324 2N2325 2N2326 Unit VDRM Peak Forward Blocking Voltage (1) Min : 25 50 100 150 200 V IRRM Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Max : 100 µA IDRM Peak Forward Blocking Current (Rated VDRM, TJ =125°C) Max : 100 µA VTM Forward « on » Voltage ITM=1.0 A Peak Max : 1.5 V ITM =3.14 A Peak TC =85°C Max : 2.0 IGT Gate Trigger Current (2) Anode Voltage=6.0 Vdc RL=100Ω Max : 200 µA Anode Voltage=6.0 Vdc RL=100Ω, TC=-65°C Max : 350 VGT Gate Trigger Voltage Anode Voltage=6.0 V RL=100Ω Max : 0.8 V Anode Voltage=6.0 V RL=100Ω, TC=-65°C Max : 1.0 VDRM = Rated RL=100Ω, TJ=125°C Min : 0.1 IH Holding Current Anode Voltage=6.0 V Max : 2.0 mA Anode Voltage=6.0 V TC=-65°C Max : 3.0 Anode Voltage=6.0 V TC=125°C Min : 0.15 (*) JEDEC Registered Values (1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring damage. (2) RGK current is not included in measurement. |
Numéro de pièce similaire - 2N2322 |
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Description similaire - 2N2322 |
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