2N2322 datasheet(2/3 Pages) COMSET

No de pièce	2N2322

Description	SILICON THYRISTORS

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Fabricant	COMSET [Comset Semiconductor]

Site Internet	http://comset.halfin.com

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2n2322 to 2n2326

12/11/2012

COMSET SEMICONDUCTORS

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ELECTRICAL CHARACTERISTICS (*)

TJ=25°C unless otherwise noted, RGK=1000Ω

Symbol

Ratings

2N2322 2N2323 2N2324 2N2325 2N2326 Unit

VDRM

Peak Forward Blocking

Voltage (1)

Min :

25

50

100

150

200

V

IRRM

Peak Reverse Blocking

Current

(Rated VDRM, TJ =125°C)

Max : 100

µA

IDRM

Peak Forward Blocking

Current

(Rated VDRM, TJ =125°C)

Max : 100

µA

VTM

Forward « on » Voltage

ITM=1.0 A Peak

Max : 1.5

V

ITM =3.14 A Peak

TC =85°C

Max : 2.0

IGT

Gate Trigger Current (2)

Anode Voltage=6.0 Vdc

RL=100Ω

Max : 200

µA

Anode Voltage=6.0 Vdc

RL=100Ω, TC=-65°C

Max : 350

VGT

Gate Trigger Voltage

Anode Voltage=6.0 V

RL=100Ω

Max : 0.8

V

Anode Voltage=6.0 V

RL=100Ω, TC=-65°C

Max : 1.0

VDRM = Rated

RL=100Ω, TJ=125°C

Min : 0.1

IH

Holding Current

Anode Voltage=6.0 V

Max : 2.0

mA

Anode Voltage=6.0 V

TC=-65°C

Max : 3.0

Anode Voltage=6.0 V

TC=125°C

Min : 0.15

(*) JEDEC Registered Values

(1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring

damage.

(2) RGK current is not included in measurement.

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Central Semiconductor C...	2N2322	138Kb / 2P	SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
New Jersey Semi-Conduct...	2N2322	168Kb / 1P	1.6A RMS UP TO 400 VOLTS
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