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SIZ728DT Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SIZ728DT Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 14 page Vishay Siliconix SiZ728DT New Product Document Number: 67694 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 25 V (D-S) MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs •100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • System Power - Notebook - Server • POL • Synchronous Buck Converter Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2. PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) Qg (Typ.) Channel-1 25 0.0077 at VGS = 10 V 16a 8.1 nC 0.0110 at VGS = 4.5 V 16a Channel-2 25 0.0035 at VGS = 10 V 35a 20.5 nC 0.0048 at VGS = 4.5 V 35a Ordering Information: SiZ728DT-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 G2 S2 S2 D1 D1 1 6 5 4 2 3 3.73 mm 6 mm PowerPAIR® 6 x 3.7 D1 S1/D2 Pin 1 (Pin 7) D1 S2 N-Channel 2 MOSFET N-Channel 1 MOSFET G1 S1/D2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 16a 35a A TC = 70 °C 16a 35a TA = 25 °C 16a, b, c 28.8b, c TA = 70 °C 14.2b, c 23b, c Pulsed Drain Current (t = 300 µs) IDM 70 100 Continuous Source Drain Diode Current TC = 25 °C IS 16a 35a TA = 25 °C 3.2b, c 3.8b, c Single Pulse Avalanche Current L = 0.1 mH IAS 18 30 Single Pulse Avalanche Energy EAS 16 45 mJ Maximum Power Dissipation TC = 25 °C PD 27 48 W TC = 70 °C 17 31 TA = 25 °C 3.9b, c 4.6b, c TA = 70 °C 2.5b, c 3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t 10 s RthJA 24 32 20 27 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 3.5 4.6 2 2.6 |
Numéro de pièce similaire - SIZ728DT_12 |
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Description similaire - SIZ728DT_12 |
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