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FQPF8N80CYDTU Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FQPF8N80CYDTU Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 12 page ©2009 Fairchild Semiconductor Corporation FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 1 www.fairchildsemi.com FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V • Low gate charge ( typical 35 nC) • Low Crss ( typical 13 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP8N80C FQPF8N80C Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 88 * A - Continuous (TC = 100°C) 5.1 5.1 * A IDM Drain Current - Pulsed (Note 1) 32 32 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 850 mJ IAR Avalanche Current (Note 1) 8A EAR Repetitive Avalanche Energy (Note 1) 17.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 178 59 W - Derate above 25°C 1.43 0.48 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQP8N80C FQPF8N80C Units RθJC Thermal Resistance, Junction-to-Case 0.7 2.1 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W TO-220 FQP Series G S D TO-220F FQPF Series G S D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G QFET TM January 2009 • RoHS Compliant |
Numéro de pièce similaire - FQPF8N80CYDTU_09 |
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Description similaire - FQPF8N80CYDTU_09 |
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