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IRF6648PBF Fiches technique(PDF) 7 Page - International Rectifier |
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IRF6648PBF Fiches technique(HTML) 7 Page - International Rectifier |
7 / 10 page IRF6648PbF www.irf.com 7 Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * Inductor Current Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer • di/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - + + + - - - RG VDD D.U.T DirectFET Substrate and PCB Layout, MN Outline (Medium Size Can, N-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D S D D D G S |
Numéro de pièce similaire - IRF6648PBF |
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