STPS40SM60C datasheet(4/10 Pages) STMICROELECTRONICS

No de pièce	STPS40SM60C

Description	Power Schottky rectifier

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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4 / 10 page

Characteristics

STPS40SM60C

4/10

Doc ID 022031 Rev 1

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 7.

Relative thermal impedance

junction to case versus pulse

duration

0

40

80

120

160

200

240

280

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

M

I

M

t

δ = 0.5

t(s)

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

t (s)

p

Figure 8.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

10

2030

4050

60

I (mA)

R

V (V)

R

T = 25 °C

j

T = 50 °C

j

T = 75 °C

j

T = 125 °C

j

T = 150 °C

j

T = 100 °C

j

100

1000

10000

1

10

100

C(pF)

V (V)

R

F = 1 MHz

V

= 30 mV

T = 25 °C

osc

RMS

j

Figure 10.

Forward voltage drop versus

forward current (per diode)

Figure 11.

Thermal resistance junction to

ambient versus copper surface

under tab

I

(A)

FM

0.1

1.0

10.0

100.0

1000.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

(Typical values)

T = 125 °C

j

(Maximum values)

T = 125 °C

j

V

(V)

FM

(Maximum values)

T = 25 °C

j

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

DPAK

2

R

(°C/W)

th(j-a)

S (cm )

Cu

2

epoxy printed board copper thickness = 35 µm

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