2N2222AHR datasheet(5/18 Pages) STMICROELECTRONICS

No de pièce	2N2222AHR

Description	Hi-Rel 40 V - 0.8 A NPN transistor

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2N2222AHR

Electrical characteristics

Doc ID 16558 Rev 9

5/18

2.2

ESCC electrical characteristics

ton

Turn-on time

VCC = 30 V

IC = 150 mA

IB1 = 15 mA

-

35ns

toff

Turn-off time

VCC = 30 V

IC = 150 mA

IB1 = -IB2 = 15 mA

-

300

ns

1.

Pulsed duration = 300 µs, duty cycle

≤ 2 %

Table 4.

JANS electrical characteristics (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Table 5.

ESCC electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off

current (IE = 0)

VCB = 60 V

VCB= 60 V

Tamb = 150 °C

-

10

nA

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 3 V

-

10

nA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 100 µA

75

-

V

V(BR)CEO

(1)

Collector-emitter

breakdown voltage

(IB = 0)

IC = 30 mA

40

-

V

V(BR)EBO

Emitter-base

breakdown voltage

(IC = 0)

IE = 100 µA

6

-

V

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 150 mA

IB = 15 mA

-

0.3

V

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = 150 mA

IB = 15 mA

0.87

1.2

V

hFE

(1)

DC current gain

IC = 0.1 mA

VCE = 10 V

IC = 10 mA

VCE = 10 V

IC = 150 mA

VCE = 10 V

IC = 500 mA

VCE = 10 V

IC = 10 mA

VCE = 10 V

Tamb = -55 °C

35

75

100

40

35

-

300

hfe

Small signal current

gain

VCE = 20 V

IC = 20 mA

f = 100 MHz

3

-10

Cobo

Output capacitance

(IE = 0)

VCB = 10 V

100 kHz

≤ f ≤1 MHz

-8

pF

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