TPD4144K datasheet(9/23 Pages) TOSHIBA

No de pièce	TPD4144K

Description	TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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TPD4144K

2012-02-09

9

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

VBB

⎯

50

280

450

Operating power supply voltage

VCC

⎯

13.5

15

16.5

V

IBB

VBB = 450 V

⎯

0.5

Current dissipation

ICC

VCC = 15 V

⎯

0.8

5

mA

IBS (ON)

VBS = 15 V, high side ON

⎯

210

410

Bootstrap Current dissipation

IBS (OFF)

VBS = 15 V, high side OFF

⎯

180

370

μA

VIH

VIN = “H”, VCC = 15 V

2.5

⎯

Input voltage

VIL

VIN = “L” , VCC = 15 V

⎯

1.5

V

IIH

VIN = 5 V

⎯

150

Input current

IIL

VIN = 0 V

⎯

100

μA

VCEsatH

VCC = 15 V, IC = 1 A, high side

⎯

2.3

3.2

Output saturation voltage

VCEsatL

VCC = 15 V, IC = 1 A, low side

⎯

2.3

3.2

V

VFH

IF = 1 A, high side

⎯

2.1

3.1

FRD forward voltage

VFL

IF = 1 A, low side

⎯

2.1

3.1

V

BSD forward voltage

VF (BSD)

IF = 500 μA

⎯

0.8

1.2

V

Regulator voltage

VREG

VCC = 15 V, IREG = 30 mA

6.5

7

7.5

V

Current limiting voltage

VR

⎯

0.46

0.5

0.54

V

Current limiting delay time

Dt

⎯

1.5

3

5

μs

Thermal shutdown temperature

TSD

VCC = 15 V

135

⎯

185

°C

Thermal shutdown hysteresis

ΔTSD

VCC = 15 V

⎯

50

⎯

°C

VCC under voltage protection

VCCUVD

⎯

10

11

12

V

VCC under voltage protection recovery

VCCUVR

⎯

10.5

11.5

12.5

V

VBS under voltage protection

VBSUVD

⎯

8

9

9.5

V

VBS under voltage protection recovery

VBSUVR

⎯

8.5

9.5

10.5

V

DIAG saturation voltage

VDIAGsat

IDIAG = 5 mA

⎯

0.5

V

Output on delay time

ton

VBB = 280 V, VCC = 15 V, IC = 1 A

⎯

1.2

3

μs

Output off delay time

toff

VBB = 280 V, VCC = 15 V, IC = 1 A

⎯

1

3

μs

Dead time

tdead

VBB = 280 V, VCC = 15 V, IC = 1 A

1.4

⎯

μs

FRD reverse recovery time

trr

VBB = 280 V, VCC = 15 V, IC = 1 A

⎯

150

⎯

ns

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