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TCR4S24DWBG Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce TCR4S24DWBG
Description  200 mA CMOS Low-Dropout Regulator
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TCR4S24DWBG Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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TCR4S12DWBG~TCR4S36DWBG
2010-07-30
1
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR4S12DWBG~TCR4S36DWBG
200 mA CMOS Low-Dropout Regulator
The
TCR4S12DWBG
to
TCR4S36DWBG
are
CMOS
general-purpose single-output voltage regulators with an on/off
control input, featuring low dropout voltage and low quiescent bias
current. The TCR4S12WBG to TCR4S36WBG can be enabled and
disabled via the CONTROL pin.
These voltage regulators are available in fixed output voltages
between 1.2 V and 3.6 V in 0.05-V steps and capable of driving up
to 200 mA. They feature overcurrent protection and auto-discharge.
The TCR4S12DWBG to TCR4S36DWBG are offered in the
compact WCSP ( 0.79 mm x 0.79 mm x 0.50 mm ) and allow the use
of small ceramic input and output capacitors. Thus, these devices
are ideal for portable applications that require high-density board
assembly such as cellular phones.
Features
Low quiescent bias current ( IB = 50 μA (typ.) at IOUT = 0 mA )
Low stand-by current ( IB(OFF) = 0.1 μA (typ.) at Stand-by mode )
Low dropout voltage ( VIN - VOUT = 90 mV (typ.) at TCR4S25DWBG, IOUT = 50 mA )
High ripple rejection ratio ( R.R = 80 dB (typ) at IOUT = 10 mA, f =1kHz )
Low output noise voltage (VNO = 30 μVrms (typ.) at TCR4S25DWBG, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz)
Auto-discharge
Control pull-down resistor
Overcurrent protection
Ceramic capacitors can be used ( CIN = 0.1 μF, COUT =1.0 μF )
Very small package, WCSP ( 0.79 mm x 0.79 mm x 0.50 mm )
Pin Assignment (top view)
S-UFBGA4-0101-0.40A01
WCSP4
Weight: 0.7 mg (typ)
VIN
VOUT
CONTROL
GND


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