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TCR4S24DWBG Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TCR4S24DWBG Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 15 page TCR4S12DWBG~TCR4S36DWBG 2010-07-30 1 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR4S12DWBG~TCR4S36DWBG 200 mA CMOS Low-Dropout Regulator The TCR4S12DWBG to TCR4S36DWBG are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage and low quiescent bias current. The TCR4S12WBG to TCR4S36WBG can be enabled and disabled via the CONTROL pin. These voltage regulators are available in fixed output voltages between 1.2 V and 3.6 V in 0.05-V steps and capable of driving up to 200 mA. They feature overcurrent protection and auto-discharge. The TCR4S12DWBG to TCR4S36DWBG are offered in the compact WCSP ( 0.79 mm x 0.79 mm x 0.50 mm ) and allow the use of small ceramic input and output capacitors. Thus, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Features • Low quiescent bias current ( IB = 50 μA (typ.) at IOUT = 0 mA ) • Low stand-by current ( IB(OFF) = 0.1 μA (typ.) at Stand-by mode ) • Low dropout voltage ( VIN - VOUT = 90 mV (typ.) at TCR4S25DWBG, IOUT = 50 mA ) • High ripple rejection ratio ( R.R = 80 dB (typ) at IOUT = 10 mA, f =1kHz ) • Low output noise voltage (VNO = 30 μVrms (typ.) at TCR4S25DWBG, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz) • Auto-discharge • Control pull-down resistor • Overcurrent protection • Ceramic capacitors can be used ( CIN = 0.1 μF, COUT =1.0 μF ) • Very small package, WCSP ( 0.79 mm x 0.79 mm x 0.50 mm ) Pin Assignment (top view) S-UFBGA4-0101-0.40A01 WCSP4 Weight: 0.7 mg (typ) VIN VOUT CONTROL GND |
Numéro de pièce similaire - TCR4S24DWBG |
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Description similaire - TCR4S24DWBG |
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