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TC75S101FU Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TC75S101FU Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TC75S101F/FU/FE 2011-04-22 1 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S101F,TC75S101FU,TC75S101FE Single Operational Amplifier (Input and Output Full Range) Features Input and Output Full Range Low-input offset voltage : VIO = 3.0 mV (max.) Low-input bias current : II = 0.1 pA (typ.) Built-in phase-compensated op-amp, obviating the need for any external device Ultra-small package Absolute Maximum Ratings (Ta = 25°C) Product device does not use these for open-loop configuration. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Operating Conditions TC75S101F TC75S101FU TC75S101FE Weight SSOP5-P-0.95 : 14 mg (typ.) SSOP5-P-0.65A : 6.2 mg (typ.) SON5-P-0.50 : 3.0 mg (typ.) Characteristics Symbol Rating Unit Supply voltage VDD, VSS 6 V Differential input voltage DVIN ±6 V Input voltage VIN VDD to VSS V TC75S101F/FU 200 Power dissipation TC75S101FE PD 100 mW Operating temperature Topr -40 to 85 °C Storage temperature Tstg -55 to 125 °C Characteristics Symbol Rating Unit 1.5 to 5.5 Supply voltage VDD, VSS ±0.75 to 2.75 V (SMV) (USV) (ESV) SON5-P-0.50 SSOP5-P-0.95 SSOP5-P-0.65A |
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