1SS416CT

2009-01-08

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS416CT

High Speed Switching Application

Small package

Characteristics

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

35

V

Reverse voltage

30

V

Maximum (peak) forward current

200

mA

Average forward current

100

mA

Surge current (10ms)

1

A

Power dissipation

P *

100

mW

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Operating temperature range

−40 to 100

°C

*:

Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

pad dimension of 4 mm × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.18

―

―

―

0.23

―

Forward voltage

―

―

0.38

0.50

V

―

―

―

20

Reverse current

―

―

―

50

μA

Total capacitance

―

―

15

―

pF

JEDEC

―

JEITA

―

TOSHIBA

1-1P1A

Weight: 0.7 mg (typ.)

Unit: mm

CST2

0.38

+0.02

-0.03

0.6±0.05

0.5±0.03

0.05±0.03