2SC6125

2009-09-24

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6125

High-Speed Switching Applications

Power Amplifier Applications

Characteristic

Symbol

Rating

Unit

Collector-base voltage

40

V

Collector-emitter voltage

20

V

Emitter-base voltage

6

V

DC

4

Collector current

(Note 1)

Pulse

7

A

Base current

0.4

A

DC

1

Collector power dissipation

(Note 2)

t = 10 s

2.5

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit : mm

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)