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2SC6125 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SC6125 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC6125 2009-09-24 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Power Amplifier Applications • High DC current gain: hFE = 180 to 390 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.2 V (max) • High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V DC IC 4 Collector current (Note 1) Pulse ICP 7 A Base current IB 0.4 A DC PC 1 Collector power dissipation (Note 2) t = 10 s PC 2.5 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm 2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit : mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
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